Fundamental Aspects of Silicon Oxidation

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Springer Series in Materials Science 46

ISBN: 3642625835
ISBN 13: 9783642625831
Herausgeber: Yves J Chabal
Verlag: Springer Verlag GmbH
Umfang: xiii, 262 S., 126 s/w Illustr., 21 farbige Illustr., 262 p. 147 illus., 21 illus. in color.
Erscheinungsdatum: 05.10.2012
Auflage: 1/2001
Produktform: Kartoniert
Einband: KT

This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).

Artikelnummer: 4536937 Kategorie:

Beschreibung

Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

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