Beschreibung
There are many devices like FinFET, Tunnel Field Effect Transistor (TFET) or Impact Ionization Metal Oxide Semiconductor (IMOS) are proposed for future technology. Among them Tunnel field effect transistors are considered as a promising candidate to replace the conversional MOSFETs. TFET shows low sub threshold swing and high ION IOFF current ratio, which is basic requirement for low power and high speed device application. Transportation mechanism of carriers of this device is Band To Band Tunneling (BTBT) and due to that this device is free from different kind of Short channel effects like Drain Induced Barrier Lowering (DIBL) and VT roll-Off. There are different kind of tunnel field effect transistor structures are proposed like vertical TFET, lateral TFET and heterojunction TFET etc. Throughout of this work, Double-gate tunnel field effect transistor (DGTFET) is considered for study.
Autorenporträt
Saurabh Mitra has over 9 years of experience in teaching and learning. More than 25 of his papers were published in national and international journals. He also received two international awards for his researches and innovations.
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