Beschreibung
Silicon nanowires have been demonstrated as one of the promising building blocks for future nano-devices such as FETs, solar cells, sensors and lithium batteries. The nanowire field effect transistor is one candidate which has the potential to overcome the problems caused by short channel effects in SOI MOSFETs and has gained significant attention from both device and circuit developers. In addition to the effective suppression of short channel effects due to improved gate strength and increased packing density, the multi-gate silicon nanowire FETs show excellent current drive and have the merit that they are compatible with conventional CMOS processes.
Autorenporträt
Mr. Mayank Chakraverty completed his B.E. degree in Electronics & Communication Engineering, M.Tech.& MS degrees in Nanotechnology and Microelectronics, respectively, from India. His areas of interest include VLSI system design, advanced CMOS processes and devices, lithography, nanoscale transistors, spintronics, MEMS and graphene electronics.
Herstellerkennzeichnung:
BoD - Books on Demand
In de Tarpen 42
22848 Norderstedt
DE
E-Mail: info@bod.de
