Defects and Impurities in Silicon Materials

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74,89 

An Introduction to Atomic-Level Silicon Engineering, Lecture Notes in Physics 916

ISBN: 4431557997
ISBN 13: 9784431557999
Herausgeber: Yutaka Yoshida/Guido Langouche
Verlag: Springer Verlag GmbH
Umfang: xv, 487 S., 112 s/w Illustr., 180 farbige Illustr., 487 p. 292 illus., 180 illus. in color.
Erscheinungsdatum: 31.03.2016
Auflage: 1/2016
Produktform: Kartoniert
Einband: Kartoniert

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Artikelnummer: 8446929 Kategorie:

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Springer Verlag GmbH
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E-Mail: juergen.hartmann@springer.com

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