Produktbild: Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

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Springer Theses

ISBN: 9811500487
ISBN 13: 9789811500480
Autor: Wang, Guilei
Verlag: Springer Verlag GmbH
Umfang: xvi, 115 S.
Erscheinungsdatum: 02.10.2020
Auflage: 1/2020
Produktform: Kartoniert
Einband: Kartoniert

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Artikelnummer: 9913279 Kategorie:

Beschreibung

Autorenporträt

Dr. Guilei WANG received his Ph.D. degree from the University of Chinese Academy of Sciences. His research Interests mainly include Semiconductor Material Growth and Device Fabrication.

Herstellerkennzeichnung:


Springer Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg
DE

E-Mail: juergen.hartmann@springer.com

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