Beschreibung
This book describes techniques that can reduce mechanical-stress-induced inaccuracy and long-term instability in chips. The authors also show that the piezojunction effect can be applied for new types of mechanical-sensor structures. Thermo-mechanical stress is induced when packaged chips cool down to the temperature of application.
Inhaltsverzeichnis
1: Introduction. 1.1. Previous research on the piezojunction effect. 1.2. Mechanical stress and its influence in accuracy. 1.3. New stress-sensing circuits. 1.4. Motivation and objectives. 1.5. Book structure. 2: Mechanical stress in integrated circuits. 2.1. Introduction. 2.2. Mechanical properties of crystalline silicon. 2.3. Mechanical stress. 2.4. Strain. 2.5. Silicon crystal orientation. 2.6. Elastic properties of silicon. 2.7. Origin of mechanical stress in a silicon die. 2.8. Mechanical stress conditions to characterize microelectronic circuits. 3: Piezo effects in silicon. 3.1. Introduction. 3.2. An overview about the piezo effects in silicon. 3.3. Review of the piezoresistive theory of silicon. 3.4. Piezojunction effect. 4: Characterization of the piezojunction effect. 4.1. Introduction. 4.2. Vertical transistors. 4.3. Lateral transistors. 4.4. Summary of the piezojunction coefficients. 4.5. Conclusions. 5: Minimizing the piezojunction and piezoresistive effects in integrated devices. 5.1 Introduction. 5.2. Vertical transistors. 5.3. Lateral transistors. 5.4. Resistors. 5.5. Conclusions. 6: Minimizing the inaccuracy in packaged integrated circuits. 6.1. Introduction. 6.2. Translinear circuits. 6.3. Translinear circuits with resistors. 6.4. Bandgap references and temperature transducers. 7: Stress-sensing elements based on the piezojunction effect. 7.1. Introduction. 7.2. Stress-sensing elements based on the piezoresistive effect. 7.3. Stress-sensing elements based on the piezojunction effect. 7.4. Comparison between the piezojunction effect and the piezoresistive effect for stress-sensing applications. 7.5. Maximizing the piezojunction effect in L-PNP transistors. 7.6. Stress-sensing element based on the L-PNP current mirror. 7.7. Conclusions. 8: Conclusions. Appendix: A. Transformation of coordinate system. B. Stress calculations based on the cantilever technique. C. Transformation of coordinate system for the second-order piezoresistive coefficients. D. MatLab program used to calculate the stress-induced in change in VBE and Vref. List of symbols. Index
