Beschreibung
5. 2. Distinction between thick- and thin-film devices. 109 5. 3. I-V Characteristics. 112 5. 3. 1. Threshold voltage. 11 2 5. 3. 2. Body effecL. 1 1 8 5. 3. 3. Short-channel effects. 120 5. 3. 4. Output characteristics. 1 24 5. 4. Transconductance and mobility. 129 5. 4. 1 Transconductance. 129 5. 4. 2. Mobility. 130 5. 5. Subthreshold slope. 132 5. 6. Impact ionization and high-field effects. 13 9 5. 6. 1. Kink effecL. 1 39 5. 6. 2. Hot-electron degradation. 143 5. 7. Parasitic bipolar effects. 145 5. 7. 1. Anomalous subthreshold slope. 1 45 5. 7. 2. Reduced drain breakdown voltage. 14 7 5. 8. Accumulation-mode p-channel MOSFET. 14 9 CHAPTER 6 - Other SOl Devices. 1 5 9 6. 1. Non-conventional devices adapted from bulk. 159 6. 1. 1. COMFET. 160 6. 1. 2. High-voltage lateral MOSFET. 1 6 1 6. 1. 3. PIN photodiode. 162 6. 1. 4. JFET. 163 6. 2. Novel SOl devices. 164 6. 2. 1. Lubistor. 164 6. 2. 2. Bipolar-MOS device. 166 6. 2. 3. Double-gate MOSFET. 1 69 6. 2. 4. Bipolar transistors. 172 6. 2. 5. Optical modulator. 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. 1 77 7. 1. Radiation environment. 1 7 7 7. 1. 1. SEU. 178 7. 1. 2. Total dose. 180 7. 1. 3. Dose-rate. 1 8 4 7. 2. High-temperature operation. 1 85 7. 2. 1. Leakage currents.
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