MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

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109,99 

Analog Circuits and Signal Processing 122

ISBN: 3319345354
ISBN 13: 9783319345352
Autor: Srivastava, Viranjay M/Singh, Ghanshyam
Verlag: Springer Verlag GmbH
Umfang: xv, 199 S., 10 s/w Illustr., 45 farbige Illustr., 199 p. 55 illus., 45 illus. in color.
Erscheinungsdatum: 23.08.2016
Auflage: 1/2014
Produktform: Kartoniert
Einband: Kartoniert

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. ·         Provides a single-source reference to the latest technologies for the design ofDouble-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET;·         Explains the design of RF switches using the technologies presented and simulates switches;·         Verifies parameters and discusses feasibility of devices and switches.

Artikelnummer: 9678360 Kategorie:

Beschreibung

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Autorenporträt

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Herstellerkennzeichnung:


Springer Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg
DE

E-Mail: juergen.hartmann@springer.com

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