Beschreibung
Master's Thesis from the year 2012 in the subject Materials Science, University of California, Berkeley, language: English, abstract: The application of graphene for large-area electronics requires controllable growth of single crystalline quasi-freestanding graphene films. Controllable growth of graphene films on gold foils at various temperatures using molecular beam epitaxy is shown. Film quality and electrical characteristics probed using Hall measurement, Raman spectroscopy, and Rutherford backscattering spectrometry are shown to improve at lower temperature possibly peaking at ~825C. Further experiments are required to assess a stronger correlation between growth parameters and film characteristics. In particular, varying carbon flux and increasing the number of growths are discussed.
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