Beschreibung
Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.
Autorenporträt
Harish Bhandari received the Bachelors in Chemical Engineering (2000) from Bangalore University, India. He earned his M.S. and Ph.D. (2006) in Chemical Engineering at the University of Alabama. He is currently a Research Associate in Chemistry Dept. at Harvard University. His interests include thin film, surface science and vacuum technology.
