Beschreibung
This book focuses on the heterogeneous growth optimization of III-V nanostructures on Si (001) substrate displaying a miscut toward [110]. The main purpose concerns the integration of efficient light sources on Si substrate for high-speed optical interconnects inter-and intra-chip, as a cornerstone for the development of optoelectronic integrated circuits (OEIC).First, this study focuses on the optimisation of nitrogen incorporation in GaPN on GaP(001) substrate, while reachingthe lattice-matching condition with Si. This study is also interesting for the growth of any GaPN-based dilute nitridecompounds, such as GaAsPN, which are very attractive for long wavelength laser applications and high-efficiency photovoltaic applications on Si substrates. In a second step, I studied the growth of an active layer based on (In,Ga)As quantum dots (QD) on GaP (001) substrate. These QD display a high density and good uniformity in size. Room temperature photoluminescence is also obtained on these QD, which is very promising for the fabrication of integrated optoelectronic sources on a silicon substrate. Finally the GaP/Si interface is optimized for subsequent growth of efficient light sources.
Autorenporträt
Dr. NGUYEN Thanh Tra was born in 1986 in BEN TRE - Vietnam. He received his PhD diploma in 2013 in Physics and Optoelectronics. His PhD work was in the framework of silicon photonics based on monolithic integration of III-V nanostructures on Si. He is currently working as a Postdoc researcher at the European Synchrotron Radiation Facility (ESRF).
Herstellerkennzeichnung:
BoD - Books on Demand
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