Beschreibung
Computational calculation of energy loss and damage profiles when implanted by gallium and arsenic ions independently on amorphous germanium during ion implantation had been carried out. The required energies for doping of gallium ion and arsenic ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM. These energies when implanted independently on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 130 keV gallium ion, the energy used for ionization, phonon production and vacancies creation are 37.713 keV (29.01%), 90.006 keV (64.29%) and 8.71 keV (6.7%) respectively, whereas, for 140 keV arsenic ion, the energy consumption for ionization, phonon production and vacancies creation are 39.634 keV (28.31%), 90.888 keV (64.92%) and 9.478 keV (6.77%), respectively. The amount of target displacement, replacement collisions and vacancies are also evaluated.
Autorenporträt
Karan Giri has been involving in research work in Physics. He has three articles published in three different online Journals and couple of articles is under review. Moreover, he has great enthusiasm in writing physics books. He has been working in writing a Physics book for secondary level students.
