Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

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53,49 

SpringerBriefs in Applied Sciences and Technology

ISBN: 9811325707
ISBN 13: 9789811325700
Autor: Dinh, Toan/Nguyen, Nam-Trung/Dao, Dzung Viet
Verlag: Springer Verlag GmbH
Umfang: xi, 115 S., 6 s/w Illustr., 60 farbige Illustr., 115 p. 66 illus., 60 illus. in color.
Erscheinungsdatum: 23.10.2018
Auflage: 1/2019
Produktform: Kartoniert
Einband: Kartoniert

This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.

Artikelnummer: 5407870 Kategorie:

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Springer Verlag GmbH
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69121 Heidelberg
DE

E-Mail: juergen.hartmann@springer.com

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