Modern Crystallography III

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171,19 

Crystal Growth, Springer Series in Solid-State Sciences 36

ISBN: 3642818374
ISBN 13: 9783642818370
Autor: Chernov, A A
Verlag: Springer Verlag GmbH
Umfang: xx, 517 S.
Erscheinungsdatum: 08.12.2011
Auflage: 1/2011
Produktform: Kartoniert
Einband: Kartoniert

Inhaltsangabe1: Crystallization Processes.- 1 Equilibrium.- 1.1 Phase Equilibrium.- 1.1.1 One-Component Systems.- 1.1.2 Multicomponent Systems.- 1.1.3 Crystallization Pressure.- 1.2 Surface Energy and Periodic Bond Chains.- 1.2.1 Surface Energy.- 1.2.2 Periodic Bond Chains and Estimates of the Surface Energy.- 1.2.3 Surface Energy Anisotropy.- 1.3 Atomic Structure of the Surface.- 1.3.1 Surface Configurations and Their Energies.- 1.3.2 Adsorption Layer.- 1.3.3 Step Roughness.- 1.3.4 Surface Roughness.- 1.4 Phase Equilibrium with Allowance for Surface Energy. Equilibrium Shape of a Crystal.- 1.4.1 Phase Equilibrium over a Curved Surface.- 1.4.2 Equilibrium Shape of a Crystal.- 1.4.3 Average Detachment Work. Finding Faces of Equilibrium Shape.- 1.4.4 Experimental Observation of an Equilibrium Shape.- 2 Nucleation and Epitaxy.- 2.1 Homogeneous Nucleation.- 2.1.1 Work and Rate of Nucleation. Size and Shape of Nuclei.- 2.1.2 Critical Supersaturation and Metastability Boundary in Vapors.- 2.1.3 Nucleation in Condensed Phases.- 2.1.4 Transient Nucleation Processes.- 2.2 Heterogeneous Nucleation.- 2.2.1 Work and Rate of Nucleation. Size and Shape of Nuclei.- 2.2.2 Atomistic Picture of Nucleation. Clusters.- 2.2.3 Decoration. Initial Stages of Growth.- 2.2.4 Activity of Solid Surfaces in Melts.- 2.3 Epitaxy.- 2.3.1 Principal Manifestations.- 2.3.2 Thermodynamics.- 2.3.3 Kinetics.- 2.3.4 Misfit Dislocations and the Conditions of Pseudomorphism.- 3 Growth Mechanisms.- 3.1 Normal and Layer Growth of Crystals.- 3.1.1 Conditions of Normal and Layer Growth.- 3.1.2 Kinetic Coefficients in Normal Growth.- 3.1.3 Layer Growth and the Anisotropy of the Surface Growth Rate.- 3.2 Layer Growth in Different Phases.- 3.2.1 Growth from Vapor.- 3.2.2 Growth from Solution.- 3.2.3 Growth from the Melt.- 3.3 Layer Sources and Face Growth Rates.- 3.3.1 Nuclei.- 3.3.2 Dislocations.- 3.3.3 Kinetic Coefficient and Anisotropy of Face Growth.- 3.3.4 Experimental Data on Layer Sources.- 3.4 Morphology of a Surface Growing Layerwise.- 3.4.1 Optical Methods Used to Investigate Growth Processes and Surfaces.- 3.4.2 Steps, Vicinal Hillocks, and the Formation of Dislocations During Vapor Growth.- 3.4.3 Kinematic Waves and Macrosteps.- 3.4.4 Surface Melting.- 4 Impurities.- 4.1 Effect of Impurities on Growth Processes.- 4.1.1 Thermodynamics and Structure of Solutions.- 4.1.2 Adsorption.- 4.1.3 Dependences of Growth and Morphology on the Concentration of Impurities.- 4.2 Trapping of Impurities: Classification and Thermodynamics.- 4.2.1 Classification.- 4.2.2 Thermodynamics.- 4.2.3 Equilibrium Impurity Distribution in a Crystal-Melt System.- 4.2.4 Equilibrium Impurity Distribution in a Crystal-Solution System.- 4.2.5 Equilibrium in the Surface Layer.- 4.2.6 Mutual Effects of Impurity Particles.- 4.3 Trapping of Impurities: Kinetics.- 4.3.1 Surface Processes.- a) Statistical Selection.- b) Diffusional Relaxation.- c) Sectorial Structure.- d) Vicinal Sectoriality.- e) Rapid Diffusionless Crystallization.- 4.3.2 Pulse Annealing.- 4.3.3 Diffusion in the Mother Medium.- 4.3.4 Observed Distribution Coefficients.- 5 Mass and Heat Transport. Growth Shapes and Their Stability.- 5.1 Mass and Heat Transfer in Crystallization.- 5.1.1 Stagnant Solution. Kinetic and Diffusion Regimes.- 5.1.2 Stirred Solution. Summation of Resistances.- 5.1.3 Kinetic and Diffusion Regimes in the Melt.- 5.1.4 Diffusion Field of a Polyhedron.- 5.2 Growth Shapes.- 5.2.1 Kinematics.- 5.2.2 Determination of Crystal Habit by the PBC Method.- 5.2.3 The Bravais-Donnay-Harker Rule.- 5.2.4 Effect of Growth Conditions.- 5.2.5 Faceting Effect.- 5.3 Stability of Growth Shapes.- 5.3.1 Sphere.- 5.3.2 Polyhedron.- 5.3.3 Plane.- 6 Creation of Defects.- 6.1 Inclusions.- 6.1.1 Inclusions of the Mother Liquor.- 6.1.2 Inclusions of Foreign Particles.- 6.2 Dislocations, Internal Stresses and Grain Boundaries.- 6.2.1 Dislocations from a Seed.- 6.2.2 Creation of Dislocations in Surface Processes.- 6.2.3 Orientation of Dislocations.- 6.2.

Artikelnummer: 4379841 Kategorie:

Beschreibung

Early in this century, the newly discovered x-ray diffraction by crystals made a complete change in crystallography and in the whole science of the atomic structure of matter, thus giving a new impetus to the development of solid-state physics. Crystallographic methods, pri marily x-ray diffraction analysis, penetrated into materials sciences, mol ecular physics, and chemistry, and also into many other branches of science. Later, electron and neutron diffraction structure analyses be came important since they not only complement x-ray data, but also supply new information on the atomic and the real structure of crystals. Electron microscopy and other modern methods of investigating mat ter-optical, electronic paramagnetic, nuclear magnetic, and other res onance techniques-yield a large amount of information on the atomic, electronic, and real crystal structures. Crystal physics has also undergone vigorous development. Many re markable phenomena have been discovered in crystals and then found various practical applications. Other important factors promoting the development of crystallog raphy were the elaboration of the theory of crystal growth (which brought crystallography closer to thermodynamics and physical chem istry) and the development of the various methods of growing synthetic crystals dictated by practical needs. Man-made crystals became increas ingly important for physical investigations, and they rapidly invaded technology. The production. of synthetic crystals made a tremendous impact on the traditional branches: the mechanical treatment of mate rials, precision instrument making, and the jewelry industry.

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