Tantalum and Niobium-Based Capacitors

Lieferzeit: Lieferbar innerhalb 14 Tagen

96,29 

Science, Technology, and Applications

ISBN: 3030895130
ISBN 13: 9783030895136
Autor: Freeman, Yuri
Verlag: Springer Verlag GmbH
Umfang: xxi, 149 S., 69 s/w Illustr., 50 farbige Illustr., 149 p. 119 illus., 50 illus. in color.
Erscheinungsdatum: 14.12.2021
Auflage: 2/2022
Produktform: Gebunden/Hardback
Einband: Gebunden

This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a singlesource reference to the science, technology, and applications of Tantalum and Niobiumbased capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metalinsulatorsemiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.

Artikelnummer: 2878341 Kategorie:

Beschreibung

Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics

Autorenporträt

Yuri Freeman received his masters degree as engineer-physicist from the renowned school of Thin Solid Films at the Kharkiv Polytechnic Institute in Ukraine. He graduated among the first in his class and hoped to continue his work in academia. However, as it was still Soviet Union times and graduates were distributed often contrary to their choices, Yuri was sent to work for SCB ELITAN, a developer and producer of tantalum capacitors. At first Yuri thought sadly: What could be more primitive than a capacitor with two plates separated by a dielectric? He realized only later that his random assignment was an incredible opportunity for a scientist and an engineer! The change started with his involvement in the development of niobium capacitors to substitute tantalum capacitors, enforced by a shortage in tantalum in former Soviet Union. Comparison of the degradation mechanisms in tantalum and niobium capacitors became the topic of his Ph.D. in solid-state physics.Shortly after the collapse of the Soviet Union, SCB ELITAN was closed and Yuri started his work for Sprague-Electric later Vishay-Sprague, the original manufacturer of solid tantalum capacitors. After several years with Vishay Sprague, where Yuri was promoted to principal scientist, his facility in Sanford, Maine, USA, was closed, and manufacturing moved overseas. While Yuri was looking for a new job, his Siberia-born wife fell in love with sunny South Carolina, and thats how Yuri ended up at KEMET Electronics, a global producer of tantalum capacitors. This turned out to become the best part of his career with the most challenging projects and the industrys best team to work with. Now, Yuri is a Fellow/VP, director of strategic development in tantalum at KEMET Electronics. As an adjunct professor, he is also teaching science and technology of the electronic components at the Clemson University.In 2018, the Tantalum and Niobium International Study Center (TIC) awarded Yuri Freeman the Ekeberg Prize for the outstanding contribution to the advancement of the knowledge and the understanding of the metallic elements tantalum and niobium

Herstellerkennzeichnung:


Springer Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg
DE

E-Mail: juergen.hartmann@springer.com

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