Systematic Design of CMOS Switched-Current Bandpass Sigma-Delta Modulators for Digital Communication Chips

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ISBN: 0792376781
ISBN 13: 9780792376781
Herausgeber: José M de la Rosa/Belén Pérez-Verdú/Ángel Rodríguez-Vázquez
Verlag: Springer Verlag GmbH
Umfang: xxxvi, 449 S., 49 s/w Illustr., 449 p. 49 illus.
Erscheinungsdatum: 31.03.2002
Produktform: Gebunden/Hardback
Einband: GEB
Artikelnummer: 1504857 Kategorie:

Beschreibung

This very detailed book discusses architectures, circuits and procedures for the optimum design of bandpass sigma-delta A/D interfaces for mixed-signal chips in standard CMOS technologies. It provides uniquely in-depth coverage of switched-current errors, which supports the design of high performance SI chips.

Inhaltsverzeichnis

List of Figures. List of Tables. Preface. Acknowledgments. Prologue. 1: Bandpass Sigma-Delta A/D Converters - Fundamentals and State-of-the-Art. 1.1. Introduction. 1.2. Analog-to-digital interfaces for digital radio receivers. 1.3. Analog-to-Digital Conversion: Fundamentals. 1.4. Oversampling SD Analog-to-Digital Converters. 1.5. Bandpass SD modulators. 1.6. Synthesis of bandpass SD modulator architectures. 1.7. Decimation for bandpass SD ADCs. 1.8. State-of-the-art bandpass SD ADCs. 2: Switched-Current Building Blocks for SD Modulators. 2.1. Introduction. 2.2. Principle of Operation: The Current Memory Cell. 2.3. SI Integrators. 2.4. SI Differentiators. 2.5. SI Resonators. 2.6. SI quantizers. 2.7. Current Mode 1-bit D/A Converters. 3: Mechanisms of Error in Switched-Current Circuits. 3.1. Introduction. 3.2. Finite output-input conductance ratio error. 3.3. Charge injection error. 3.4. Settling error. 3.5. Mismatch error. 3.6. Electrical noise. 3.7. Maximum signal range - Class AB memory cells. 3.8. Other mechanisms of error. 3.9. Design considerations for SI memory cells. 4: Non-Ideal Performance of Switched-Current Bandpass SD Modulators. 4.1. Introduction. 4.2. Ideal noise shaping in fourth-order bandpass SD modulators. 4.3. Impact of linear errors on the performance of SI integrators. 4.4. Impact of linear errors on the performance of SI resonators. 4.5. Non-ideal quantization noise shaping in fourth-order BPSDMs. 4.6. Cumulative influence of SI errors on the quantization noise shaping. 4.7. Harmonic distortion due to non-linear SI errors. 4.8. SNR degradation due to non-linear SI errors. 4.9. Thermal noise in bandpass SD modulators. 5: Behavioral Simulation of Switched-Current SD Modulators. 5.1. Introduction. 5.2. Simulation of SI circuits. 5.3. Behavioural modeling of SI integrators. 5.4. Behavioural Modeling of 1-bit Quantizers and D/A Converters. 5.5. SDSI: A MATLAB based behavioural simulator for SI SD modulators. 5.6. SDSI Application: Effect of SI errors on single-loop LP and BP SD modulators. 6: Practical IC Implementations. 6.1. Introduction. 6.2. Bandpass SD modulators for AM digital radio receivers. 6.3. Switched-current implementation. 6.4. A high frequency current mode buffer. 6.5. Practical design issues. 6.6. Experimental results. 6.7. Illustrating by measurements the performance degradation with SI errors. References. Appendix A: Distortion analysis of SI memory cells with nonstationary input signals using Volterra series. Appendix B: Effect of mismatch error on the performance of a memory cell with non-unity gain. Index.

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