Beschreibung
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within s is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated (< 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.
Autorenporträt
Dr Raed Amro holds a doctoral degree in electrical engineering from the Technical University of Chemnitz in Germany.works as Professor at Palestine Polytechnic University in Hebron-Palestine.
Herstellerkennzeichnung:
OmniScriptum SRL
Str. Armeneasca 28/1, office 1
2012 Chisinau
MD
E-Mail: info@omniscriptum.com
