Beschreibung
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Inhaltsverzeichnis
Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation - Balance Equations - The Microscopic Relaxation Time - Fluctuations in the Steady-State - References The Monte-Carlo Method Basic Monte-Carlo Methods - The Monte-Carlo Solver of the Boltzmann Equation - Velocity Autocorrelation Function - Basic Statistics - Convergence Estimation - References Scattering Mechanisms Phonon Scattering - Alloy Scattering - Impurity Scattering - Impact Ionization by Electrons - Surface Roughness Scattering - References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon - Basic Properties of the Band Structure of Strained SiGe - k-Space Grid - Calculation of the Density of States - Mass Tensor Evaluation - Particle Motion in Phase-Space - Selection of a Final State in k-Space - References Device Simulation Device Discretization - Band Edges - Poisson Equation - Self-Consistent Device Simulation - Nonlinear Poisson Equation - Nonself-Consistent Device Simulation - Statistical Enhancement - Terminal Current Estimation - Contact Resistance - Normalization of Physical Quantities - References Momentum-Based Transport Models The Hydrodynamic Model - Small-Signal Analysis - Noise Analysis - The Drift-Diffusion Model - Transport and Noise Parameter Simulation - References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error - In-Advance CPU Time Estimation - References Results N+ NN+ and P+ PP+ Structures - MOSFETs - SiGe HBTs Subject Index
Autorenporträt
InhaltsangabeIntroduction References Semiclassical Transport Theory The Boltzmann Transport Equation - Balance Equations - The Microscopic Relaxation Time - Fluctuations in the Steady-State - References The Monte-Carlo Method Basic Monte-Carlo Methods - The Monte-Carlo Solver of the Boltzmann Equation - Velocity Autocorrelation Function - Basic Statistics - Convergence Estimation - References Scattering Mechanisms Phonon Scattering - Alloy Scattering - Impurity Scattering - Impact Ionization by Electrons - Surface Roughness Scattering - References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon - Basic Properties of the Band Structure of Strained SiGe - k-Space Grid - Calculation of the Density of States - Mass Tensor Evaluation - Particle Motion in Phase-Space - Selection of a Final State in k-Space - References Device Simulation Device Discretization - Band Edges - Poisson Equation - Self-Consistent Device Simulation - Nonlinear Poisson Equation - Nonself-Consistent Device Simulation - Statistical Enhancement - Terminal Current Estimation - Contact Resistance - Normalization of Physical Quantities - References Momentum-Based Transport Models The Hydrodynamic Model - Small-Signal Analysis - Noise Analysis - The Drift-Diffusion Model - Transport and Noise Parameter Simulation - References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error - In-Advance CPU Time Estimation - References Results N+ NN+ and P+ PP+ Structures - MOSFETs - SiGe HBTs Subject Index
