Produktbild: Field-effect Self-mixing Terahertz Detectors

Field-effect Self-mixing Terahertz Detectors

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Springer Theses

ISBN: 3662569485
ISBN 13: 9783662569481
Autor: Sun, Jiandong
Verlag: Springer Verlag GmbH
Umfang: xviii, 126 S., 80 s/w Illustr., 4 farbige Illustr., 126 p. 84 illus., 4 illus. in color.
Erscheinungsdatum: 30.03.2018
Auflage: 1/2016
Produktform: Kartoniert
Einband: Kartoniert

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2micronsized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

Artikelnummer: 5457967 Kategorie:

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