Beschreibung
With the increasing availability of MMICs at high frequencies beyond 100 GHz low-loss interconnects for module fabrication become essential. This work presents the results of the flip-chip interconnects approach exhibiting bandwidths from 220 GHz up to 500 GHz. Flipchip transitions in this study were fabricated based on simulated 3D models in three different topologies: coplanartocoplanar, striplinetocoplanar, and striplinetostripline. The interconnects were realized with 10 µmdiameter AuSn microbumps. After the flipchip mounting, scattering parameter measurements were performed to characterize the interconnect quality. The results suggest that the flipchip technology is currently the most suitable technology for the high frequency range.