Bias Temperature Instability for Devices and Circuits

Lieferzeit: Lieferbar innerhalb 14 Tagen

117,69 

ISBN: 1493955292
ISBN 13: 9781493955299
Herausgeber: Tibor Grasser
Verlag: Springer Verlag GmbH
Umfang: xi, 810 S., 283 s/w Illustr., 318 farbige Illustr., 810 p. 601 illus., 318 illus. in color.
Erscheinungsdatum: 01.10.2016
Auflage: 1/2014
Produktform: Kartoniert
Einband: Kartoniert

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime. ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics;·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence;·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs;·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.

Artikelnummer: 9700920 Kategorie:

Beschreibung

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Herstellerkennzeichnung:


Springer Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg
DE

E-Mail: juergen.hartmann@springer.com

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