Beschreibung
The ability to sense and respond reliably in extreme environments is crucial for advancing technologies in space, aeronautics, automotive, and energy applications. Conventional silicon-based sensors face intrinsic material limitations under such conditions, where high temperatures, radiation, and mechanical stress degrade their performance. Gallium nitride (GaN), with its wide bandgap, high thermal stability, and mechanical robustness, offers a promising alternative for sensor technologies operating beyond the limits of silicon. This work investigates the design, fabrication, and characterization of GaN-based pressure sensors developed for stable and precise measurements in harsh environments. A Wheatstone-bridge configuration integrating High Electron Mobility Transistors (HEMTs) enables high sensitivity, excellent linearity, and low power consumption. The fabrication process combines front-end and back-end integration steps within an Au-free technology platform and includes backside micromachining for circular and bossed membrane structures. Experimental evaluation under controlled temperature and pressure conditions demonstrates reliable operation and strong agreement with simulation results. The study further explores the potential of gated HEMT devices to enhance sensitivity through electrical tuning, enabling flexible operation across different measurement ranges. The results highlight the suitability of GaN for highly resilient, low-power, and integrable sensor systems, offering a robust foundation for future research on signal conditioning and temperature compensation. Overall, this work contributes to the advancement of GaN pressure sensing technologies capable of sustained performance in extreme and mission-critical environments.
Herstellerkennzeichnung:
Shaker Verlag GmbH
Am Langen Graben 15a
52353 Düren
DE
E-Mail: info@shaker.de
