Beschreibung
The conventional UV photodetectors like vacuum diode, photomultiplier tubes etc are bulky devices which needs vacuum and also costly cathode targets. The modern photodetectors are based on the wide band gap semiconductor materials in which band to band transition has been occurred due to absorption of UV light. They are well known as visible-blind UV photodetectors. The verity of the materials have been used to fabricate solar blind UV photodetectors among them ZnO has been selected as an eminent candidate as it has great environmental stability even in harsh atmosphere. This material is meticulously used because of its transparency in the visible region and the exceptional optical and electric properties. ZnO receives particular attention owing to being relatively non-toxic, thermally stable, and made from inexpensive raw materials. Concerning with the MSM UV photodetector, a variety of MSM photodetector structures are fabricated and studied for high performance and visible blind devices. Present work encompasses synthesis and fabrication of the ZnO thin film based visible blind UV photodetector.
Autorenporträt
Dr. S. I. Inamdar has received her Ph.D. in Physics from Shivaji University; Kolhapur, India. Presently she is working as Assistant Professor in the Dattajirao Kadam arts-science-commerce college, Ichalkarangi. Her research interests include studies on metal oxides thin films for UV photodetectors and gas sensors.
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