Rare Earth Doped NiO Nanostructure For H2S Sensor and Photodetector

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76,90 

ISBN: 6139876060
ISBN 13: 9786139876068
Autor: Ibrahim, Isam/Ramziy, Asmiet/Mohammed, Abu Bakr Sabbar
Verlag: LAP LAMBERT Academic Publishing
Umfang: 232 S.
Erscheinungsdatum: 21.09.2018
Auflage: 1/2018
Format: 1.5 x 22 x 15
Gewicht: 364 g
Produktform: Kartoniert
Einband: Kartoniert
Artikelnummer: 5625958 Kategorie:

Beschreibung

The properties of semiconductors at the nano scale has taken great interest in recent decades. The essential properties of the semiconductor nanoscale structure can be significantly changed by controlling their shape and size without altering their composition. When the holes and electrons in semiconductors are confined to dimensions below their de-Bröglie wavelength (usually1-30nm), the quantum mechanical size effects ppeared. Thin film studies have directly or indirectly advanced in many new fields of research in solid state physics and chemistry which are based on uniquely characteristic of the geometry, structure and thickness of the film, when we consider a very thin film of some material. Optoelectronics thin film and microelectronics one of among the most powerful technological drivers of economy. ]. Metal oxides are important in environmental treatment and electronics because of their capability to generating charge carriers when stimulated with necessary amount of energy. Metal oxide shows good properties such as good arrangement of electronic structure, charge transport characteristics and light absorption properties which have made it possible in many applications.

Autorenporträt

Associate Prof. Isam M. Ibrahim, (Ph.D 2009), Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq.Associate Prof. Asmiet Ramziy Al-Hadithi, (Ph.D 2011), Department of Physics, College of Science, University of Al-Anbar, Anbar, Iraq.Abu Bakr Sabbar Mohammed (Ph.D 2017), Amiriyah Al-Falluja, Fallujah, Anbar, Iraq.

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