Beschreibung
Radiation defect generation by high-energy MeV electron irradiation of n- and p- type Si-SiO2 structure with different kind of oxides has been studied. The morphology changes of SiO2 oxide during MeV electrons irradiation was observed by AFM. Si+ ion implanted Si-SiO2 structures before and after MeV electron irradiation are presented. The redistribution of oxygen and silicon atoms and Si nanocrystal generation during MeV electron irradiation was observed by RBS/C and AFM techniques respectively. Optical properties, photoluminescence and spectroscopic studies of SiOx films irradiated with MeV electrons are carried out also.
Autorenporträt
Prof. Sonia Kaschieva PhD, DSc, ISSP, BAS. Sofia, Bulgaria. Born 1943, Bulgaria. 1999 - Doctor of Sciences in JINR, Dubna, Russia. 2004 -Professor, associated. member of ISSP - BAS Prof. Sergey N. Dmitriev PhD, DSc, JINR, Dubna - RussiaBorn 1954, Russia1996 Doctor of Sciences in JINR, Dubna, Russia2000 Professor, Director of the FLNR JINR
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