Beschreibung
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Autorenporträt
Inhaltsangabe1. III-V Semiconductor Surface Interactions.- 1. Introduction.- 2. Interface States and Schottky Barriers.- 3. Clean Surfaces of III-V Semiconductors.- 3.1. Crystallographic Structures of Surface and Bulk.- 3.2. Bulk and Surface Electronic States.- 3.3. Surface Imperfections and Defects.- 4. Adsorption of Gases on Clean III-V Semiconductors.- 4.1. General Introduction.- 4.2. Oxygen Adsorption.- 4.3. Chlorine on III-V Semiconductors.- 4.4. H2, H2S, and H2O Adsorption.- 5. Metal Films on Clean III-V Surfaces.- 5.1. General Introduction.- 5.2. Interactions at Very Small Coverages.- 5.2.1. Cesium on GaAs (110).- 5.2.2. Al, Ga, and In on GaAs and InP.- 5.2.3. Au and Ag on GaAs and InP.- 5.3. Interactions with Thick Metal Films.- 6. The Electrical Nature of Intimate Interfaces.- 6.1. Introduction.- 6.2. Abrupt Boundary Models.- 6.3. Nonabrupt Boundary Theories.- 7. Conclusions.- References.- 2. Schottky Diodes and Ohmic Contacts for the III-V Semiconductors.- 1. Introduction.- 2. Electrical Properties of Metal-Semiconductor Contacts.- 2.1. Classical Models of the Interface.- 2.1.1. Schottky Model.- 2.1.2. Bardeen Model.- 2.1.3. General Case.- 2.2. Mechanisms of Barrier Formation.- 2.3. Current Transport.- 2.3.1. Thermionic Emission: Rectification.- 2.3.2. Field Emission and Thermionic-Field Emission: Ohmic Behavior.- 2.4. Capacitance of a Schottky Diode.- 3. Schottky-Diode Technology.- 3.1. Measurement of ?B.- 3.1.1. Photoresponse Measurements.- 3.1.2. Current-Voltage Measurements.- 3.1.3. Capacitance-Voltage Measurements.- 3.2. Barrier Energies.- 3.2.1. GaAs.- 3.2.2. InP.- 3.2.3. Other Binary Compounds.- 3.2.4. III-V Alloys.- 4. Ohmic-Contact Technology.- 4.1. Methods of Forming Ohmic Contacts.- 4.1.1. Diffusion and Ion Implantation.- 4.1.2. Epitaxy.- 4.1.3. Alloying.- 4.1.4. Heterojunctions.- 4.2. Measurement of rc.- 4.2.1. Cox-Strack Method.- 4.2.2. Four-Point Method.- 4.2.3. Shockley Technique.- 4.2.4. Transmission-Line Model.- 4.3. Alloyed Ohmic Contacts.- 4.3.1. GaAs.- 4.3.2. InP.- 4.3.3. Other Binary Compounds.- 4.3.4. III-V Alloys.- References.- 3. The Deposited Insulator/III-V Semiconductor Interface.- 1. Introduction.- 2. General Overview of the Deposited Insulator/III-V Interface.- 3. Choice of Insulator and Deposition Technique.- 4. Interfacial Properties.- 4.1. Interfacial Reactions.- 4.2. Interfacial Oxide.- 4.3. Interdiffusion and Impurity Incorporation.- 4.4. Surface Evaporation.- 4.5. Energy of the Depositing Molecules.- 4.6. Interfacial Trapping and Instabilities.- 5. Experimental Results.- 5.1. InSb.- 5.2. GaAs.- 5.3. InP.- 6. Concluding Remarks.- References.- 4. Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds.- 1. Introduction.- 2. Theoretical Background.- 2.1. Differential Surface Capacitance.- 2.2. Surface States.- 2.3. Surface Conductance.- 3. Gallium Arsenide.- 3.1. Chemically Clean Surface.- 3.2. Native Oxides.- 3.3. Deposited Insulators.- 4. Indium Antimonide.- 5. Indium Phosphide.- 5.1. Native Oxides.- 5.1.1. Thermally Grown Oxides.- 5.1.2. Anodically Formed Oxides.- 5.2. Deposited Dielectrics.- 6. Indium Arsenide.- 7. Gallium Phosphide.- 8. Gallium Arsenide Phosphide.- 9. Whither Surface States.- 10. Low-Temperature Deposition of Dielectric Layers.- 11. Conclusion.- References.- 5. III-V Inversion-Layer Transport.- 1. Introduction.- 2. Quantization.- 2.1. Surface Subbands.- 2.2. Approximate Solutions.- 2.3. Effects of Nonparabolicity.- 3. Surface Scattering Mechanisms.- 3.1. Coulomb Scattering.- 3.2. Surface Roughness Scattering.- 4. Phonon Scattering.- 4.1. The Acoustic Interaction.- 4.2. Scattering by Polar Modes.- 4.3. Remote Optical Phonons.- 4.4. High Fields.- 5. Experimental Results.- 5.1. Subband Structure.- 5.2. Transport Measurements.- Summary.- References.- 6. Interfacial Constraints on III-V Compounds MIS Devices.- 1. Introduction.- 2. Dielectric-Semiconductor Interfacial Phenomena.- 2.1. Trapping.- 2.2. Scattering.- 2.3. Recombination.- 3. MIS-Device Characterist
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