Beschreibung
During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Autorenporträt
InhaltsangabeRadiation Damage.- Radiation Damage in Metals and Semiconductors.- Ionization Effects in Self-Interstitial Migration and Implant Damage Annealing in Silicon.- Internal Friction Study of Point Defects in Boron-Implanted Silicon.- Strain Induced Effects on EPR Centers in Silicon Generated by P+ Ion Implantation.- Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs.- Defect Aggregation in Ion-Implanted GaAs.- On Silicon Amorphisation During Different Mass Ions Implantation.- Silicon.- The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals.- Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance.- The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic-Doped Si.- Concentration Profiles of Arsenic Implanted in Silicon.- Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon.- Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon.- Channeling Analysis and Electrical Behavior of Boron Implanted Silicon.- Si-SiO2 Interface States Induced by Implantation of Various Ion Species.- Theory and Range.- Theory of the Spatial Distributions of Ion Range and Energy Deposition.- Theoretical and Experimental Studies on Lateral Spread of Implanted Ions.- Determination of the Critical Dose for Different Mass Ions Implanted into Silicon.- Boron Doping Profiles and Annealing Behavior of Amorphous Implanted Silicon Layers.- Ranges and Distributions of Ions Implanted in Dielectrics.- Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon.- Techniques and Novel Applications.- The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted Silicon.- The Application of Ion Implantation to the Study of Diffusion of Boron in Silicon.- The Isothermal Annealing of Defects Created in Phosphorous Ion Doped Silicon by: Additional Bombardment with Phosphorous Ions.- Physical Profile Measurements in Insulating Layers Using the Ion Analyser.- Lattice Location of Low-Z Impurities in Medium-Z Targets Using Ion-Induced X-Rays.- Ion Implantation Damage Gettering and Phosphorus Diffusion Gettering; of Cu and Au in Silicon.- The Diffusion of Cu Through Si and Gettering at Ion Damaged Surface Layers in the Presence of O.- II-VI Compound Semiconductors.- Photoluminescence. Optical Absorption, and Cathodoluminescence in Ion Implanted CdS.- Annealing Studies of Broad-Band Luminescence from Ion-Implanted ZnSe.- Thermoluminescence and Related Experiments on Br-Implanted ZnS Single Crystals.- Lattice Disorder in Br, CI, and F Implanted CdS: Channeling Study.- Lattice Disorder in Br, CI, and F Implanted CdS: Optical Reflection Study.- Electroluminescence and Photoluminescence of N+ Implanted CdS.- Metals.- The Influence of Ion Implantation upon the High Temperature Oxidation of Titanium and Stainless Steel.- The Effects of Yttrium Ion Implantation upon the Oxidation Behaviour of an Austenitic Stainless Steel.- Frictional Changes Induced by the Ion Implantation of Steel.- Possible Radiation Enhanced Diffusion of Nickel Ions in Titanium.- The Influence of Ion Bombardment on the Corrosion of Metals.- Implantation and Diffusion of Cu in Be.- Ion Implantation and Radiation Damage in Vanadium.- An Exacting Test of the Channeling Technique for Atom Location: Br Implanted into Fe.- The Lattice Site Location of C Implanted into Fe.- Other Materials.- Ion Implantation Effects in Magnetic Bubble Garnets.- Nucleation and Crystallization of Ion-Implanted Glass.- Lateral Stress Measurements in Ion-Implanted Metals and Insulators.- Changes in the Electrical Properties of Thin Anodic TiO2 Films Induced by Ion Implantation.- Electrical and Structural Changes in Ion-Bombarded TiO2.- Ion Implantation in Silver Bromide.- Refractive Index Profiles Produced in Silica Glass by Ion Implantations.- Ion Implanted Silicon-Metal Systems Si1-xMx.- III-V Compo
