Beschreibung
It is known that in the nanoscale range, a decrease in the dimensions of nanocrystals can lead to a noticeable change in their electronic and crystal structure. In particular, the band gap of silicon quantum dots is twice greater than the band gap crystalline silicon. The definition of the relationship between the changes in these parameters have scientific and practical interest. One of the promising methods for creating nanocrystals and nanofilms is low-energy ion implantation.The monograph includes original articles by the well-known academic professor B.E. Umirzakov and his students devoted to obtaining and studying the physical properties of nanoscale structures created on the basis of materials of different nature. To obtain such structures, the method of low-energy ion implantation combined with annealing (temperature, laser) was used.
Autorenporträt
Baltohodja Ermatovich Umirzakov is Professor at the Department of "Physics", Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan.
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